Gate drive circuit for insulated gate semiconductor device and f

Details Gate drive circuit for insulated gate semiconductor device and f Gate drive circuit for insulated gate semiconductor device and f

1991-03-19

1992-08-18

Laroche, Eugene R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307300, H03K 17687

Patent

active

051402017

ABSTRACT:
A gate drive circuit comprises first and second reverse-blocking switches, each composed of a serially connected transistor (101, 102) and diode (105, 106), which are connected in series between a gate drive power source (V.sub.GG) and a ground for switching a gate drive current of an insulated gate semiconductor device (3). An inductance element (108) are provided between the junction point of the first and second reverse-blocking switches and the gate of the insulated gate semiconductor device (3) to induce LC resonance by the inductance of the element (108) and the gate input capacitance of the insulate gate semiconductor device (3). Thus, both small peak switching current of the switches and high speed switching of the semiconductor device (3) can be attained. Further, a flash controller can be reduced in its size and cost by using the above gate drive circuit for on/off driving an insulated gate semiconductor device inserted in a flash main circuit.

REFERENCES:
patent: 4032851 (1977-06-01), Hoover
patent: 4461966 (1984-07-01), Hebenstreit
patent: 4491744 (1985-01-01), Grey
patent: 4687971 (1987-08-01), Shimizu
patent: 4794274 (1988-12-01), Lohn
patent: 4839686 (1989-06-01), Hosomizu et al.
patent: 4873460 (1989-10-01), Rippel
patent: 4967109 (1990-10-01), Steigerwald
patent: 4970439 (1990-11-01), Stopa

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