Gate drive circuit for an SCR

Details Gate drive circuit for an SCR Gate drive circuit for an SCR

1997-06-18

1998-12-15

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327453, 327582, H03K 1772

Patent

active

058501606

ABSTRACT:
A gate drive circuit for a silicon controlled rectifier (SCR) connected in an a-c power circuit includes a voltage divider network connected between a d-c voltage source and the SCR for developing a varying voltage on a control node, depending upon whether the anode-to-cathode a-c voltage of the SCR is positive or negative. A first switching transistor, responsive to the control node voltage, controls conduction of a second switching transistor connected between the d-c voltage source and a voltage regulated driver circuit. In this way, a constant drive current is applied to the SCR gate only while the anode-to-cathode voltage of the SCR is positive.

REFERENCES:
patent: 3757141 (1973-09-01), Paisson et al.
patent: 3793537 (1974-02-01), Stringer
patent: 4417156 (1983-12-01), Fukui et al.
patent: 4554463 (1985-11-01), Norbeck et al.
patent: 5654661 (1997-08-01), Kammiller

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