Gate drive circuit for a MOS power transistor

Details Gate drive circuit for a MOS power transistor Gate drive circuit for a MOS power transistor

1992-07-31

1994-10-25

Callahan, Timothy P.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307227, 307246, H03K 17687

Patent

active

053592441

ABSTRACT:
An improved gate drive circuit for a MOS power transistor utilizes a dual gate drive circuit configuration. The first gate drive circuit operates to quickly turn on the MOS power transistor. After the MOS power transistor is turned on, the first gate drive circuit can be disabled. A second gate drive circuit is employed to provide continuous drive to the gate of the MOS power transistor to keep the MOS power transistor on.

REFERENCES:
patent: 4540893 (1985-10-01), Bloomer
patent: 4967109 (1990-10-01), Steigerwald
patent: 4992683 (1991-02-01), Robin, Jr.
patent: 5023474 (1991-06-01), Wilcox

Affiliated with

Also associated with

Rating

Gate drive circuit for a MOS power transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate drive circuit for a MOS power transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate drive circuit for a MOS power transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-137871