Gate-drive circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

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Details

307107, 327109, H02M 906, H03K 1760

Patent

active

053999134

ABSTRACT:
A gate-drive circuit (10) is an interface between a clock (12) and control circuit (14) and a circuit (16) comprising an isolated gate bipolar transistor (IGBT) devices. The clock (12) provides two complementary clock signals (CLK1, CLK2) to the gate-drive circuit (10); the control circuit provides a signal (ENABLE) for turning the gate-drive circuit on and off, and the gate-drive circuit outputs isolated supply voltages (+RAIL, -RAIL), a drive signal (GATE), and a common reference signal (EMITTER). The control signal is sent across an isolation boundary via a 2-MHz push-pull converter in the gate-drive circuit (10). A transformer (T1) in the gate-drive circuit provides the isolation boundary. The power required to switch the IGBT device (16) is sent through the same 2-MHz converter. The secondary of the 2-MHz push-pull transformer (T1) is referenced to the IGBT emitter. As the primary side circuitry receives "on" signals from the control board (14), the converter runs and charges secondary-side bulk storage capacitors (C16, C18) in the gate-drive circuit. The gate voltage of the IGBT device is held off until the bulk storage capacitors are charged to a minimum value. When the capacitors have charged, the IGBT gate is turned on as the signal is received from the push-pull converter. The gate is then turned off by a negative voltage when the signal received from the converter is removed.

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IXYS Corporation, Preliminary Information Data Sheet No. SJ90537E, Jun. 1990, "Isosmart Half Bridge Driver Chipsets".
"A Novel Drive Circuit For Power MOSFETS," Falah Al-hosini et al., PCI, Oct. 1985 Proceedings, pp. 33-44.
HV400 Preliminary-High Speed MOSFET Driver, File No. 2850, May 1991.

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