Gate drive bias circuit for MOSFET power switches

Details Gate drive bias circuit for MOSFET power switches Gate drive bias circuit for MOSFET power switches

1991-06-10

1992-06-23

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307572, 307584, 307270, 307253, 307254, H03K 17687, H03K 1760

Patent

active

051245957

ABSTRACT:
A switching circuit for a switched power supply, and the like, which includes a field effect transistor as a power switch. The switching circuit includes a simple circuit for providing gate drive bias for the field effect transistor which forces it to share turn-off voltage with other field effect transistors connected in series with it. The switching circuit also includes a network for generating a negative gate bias for the field effect transistor to speed up switch-off of the transistor.

REFERENCES:
patent: 4952819 (1990-08-01), Herrmann

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