Gate-drain shield reduces gate to drain capacitance

Details Gate-drain shield reduces gate to drain capacitance Gate-drain shield reduces gate to drain capacitance

1990-10-22

1992-06-02

Wojciechowicz, Edward J.

Fishing, trapping, and vermin destroying

357 22, 357 239, 357 2314, 357 52, 357 84, 437184, 437195, 437912, H01L 2948, H01L 2144

Patent

active

051191490

ABSTRACT:
A gate-drain shield is used to reduce the gate to drain capacitance of a transistor. The gate-drain shield is formed as a conductor that is positioned on the surface of the transistor between the gate and the drain. The conductor is formed on an insulator thereby electrically insulating the conductor from the substrate of the transistor.

REFERENCES:
patent: 4679171 (1987-07-01), Logwood et al.
patent: 4914491 (1990-04-01), Vu
patent: 4982247 (1991-01-01), Aoki et al.

Affiliated with

Also associated with

Rating

Gate-drain shield reduces gate to drain capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate-drain shield reduces gate to drain capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate-drain shield reduces gate to drain capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2232759