Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-07-29
2008-07-29
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23147
Reexamination Certificate
active
07405463
ABSTRACT:
According to embodiments of the present invention, circuits have elements to protect a high-voltage transistor in a gate dielectric antifuse circuit. An antifuse has a layer of gate dielectric between a first terminal coupled to receive an elevated voltage and a second terminal, and a high-voltage transistor is coupled to the antifuse and has a gate terminal. An intermediate voltage between the supply voltage and the elevated voltage is coupled to the gate terminal of the high-voltage transistor to protect the high-voltage transistor.
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Marr Kenneth W.
Porter John D.
Micro)n Technology, Inc.
Pert Evan
Sandvik Ben P
Schwegman Lundberg & Woessner, P.A.
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