Gate controlled switch

Details Gate controlled switch Gate controlled switch

1982-07-09

1985-07-16

Edlow, Martin

357 20, 357 68, H01L 2974, H01L 2906, H01L 2348

Patent

active

045299994

ABSTRACT:
An improved semiconductor device, particularly a gate controlled switch is provided by optimally fitting an involute spiral cathode-gate structure into a substantially square device. 4N cathode-gate branches radiate from a central gate portion and intersect the perimeter of the square device region at predetermined locations, N per side, where N is an integer. Four of the branches tangentially intercept the square perimeter at a distance R from a centerline where R is the radius of the central gate portion. The origin of the branches is angularly displaced from the line connecting the die center to the tangential intercept point by (L/R)- arctan (L/R) radians where L is half the edge length of the square device region. Improved thermal performance is obtained by thermally coupling the cathode heat spreader to the gate as well as cathode portions of the device.

REFERENCES:
patent: 3609476 (1971-09-01), Storm
patent: 4092703 (1978-05-01), Sueoka et al.
"An Involute Gate-Emitter Configuration for Thyristors", Storm et al., IEEE Trans. on Elect. Dev., vol. ED-21, No. 8, 1974, pp. 520-522.

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