Patent
1977-08-22
1979-04-17
Clawson, Jr., Joseph E.
357 38, 357 52, 357 86, H01L 29747
Patent
active
041503910
ABSTRACT:
A semiconductor device including at least four zones of alternately opposite conductivity types, the two inner zones and the outer zone adjoining each of them in each case possessing a common surface, on which there is provided a main electrode making contact with both the inner and the outer zone, the first main electrode comprising a central recess in which the first inner zone is in contact with a control electrode, and there being on the surface of the two inner zones heavily doped regions, surrounding the two outer zones, of the same conductivity type as the adjoining inner zone and which are at a distance of at least two carrier-diffusion lengths for the purpose of forming a guard zone for the outer zone disposed on the same surface, and wherein there is provided on the surface of an inner zone, between the outer zone disposed on the same surface and the heavily doped region surrounding that outer zone, an annular guard zone of the opposite conductivity type to that of the adjacent inner zone.
REFERENCES:
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3727116 (1973-04-01), Thomas et al.
patent: 3772576 (1973-11-01), Nienhuis et al.
patent: 3911473 (1975-10-01), Nienhuis
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 4066483 (1978-01-01), D'Altroy et al.
BBC Brown Boveri & Company Limited
Clawson Jr. Joseph E.
LandOfFree
Gate-controlled reverse conducting thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gate-controlled reverse conducting thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate-controlled reverse conducting thyristor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1264743