Gate controlled diode protection for drain of IGFET

Details Gate controlled diode protection for drain of IGFET Gate controlled diode protection for drain of IGFET

1977-02-15

1978-09-19

Larkins, William D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307200B, 357 13, 357 23, 357 41, H01L 2704, H01L 2978, H01L 2990

Patent

active

041157095

ABSTRACT:
An integrated circuit includes an insulated-gate field effect transistor and a protection device coupled to either the source or drain of the transistor. The protection device includes a gate-controlled diode having a breakdown voltage that is less than the breakdown voltage of the drain of the field effect transistor.

REFERENCES:
patent: 3395290 (1968-07-01), Farina et al.
patent: 3470390 (1969-09-01), Lin
patent: 3673427 (1972-06-01), McCoy et al.
patent: 3746946 (1973-07-01), Clark
patent: 3777216 (1973-12-01), Armstrong

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