Gate-controlled bidirectional semiconductor switching device wit

Details Gate-controlled bidirectional semiconductor switching device wit Gate-controlled bidirectional semiconductor switching device wit

1989-05-04

1990-07-03

Mintel, William

357 38, 357 37, 357 86, H01L 29747

Patent

active

049395645

ABSTRACT:
When a positive gate trigger signal is applied to a gate terminal of a gate-controlled bidirectional semiconductor switching device, a first auxiliary thyristor, made up of an n-type 7th layer, a p-type 4th layer, an n-type first layer, and a p-type 8th layer, is turned on, and a resultant on-current of the thyristor is fed as a gate current, through a second wiring, to a first main thyristor made up of an n-type 5th layer, a p-type second layer, an n-type first layer, and a p-type 8th layer, turning on the first main thyristor. When a negative gate trigger signal is applied to the gate terminal, a second auxiliary thyristor, made up of an n-type 6th layer, a p-type third layer, an n-type first layer, and a p-type 8th layer, is turned on. In this case, however, a rectifier prevents an on-current of the second auxiliary thyristor from flowing to the gate terminal through the 4th layer, and, as a result, the on-current is fed, without leakage, as a gate current to the first main thyristor. Accordingly, the reactive current components in the second auxiliary thyristor are reduced, and the first main thyristor is turned on.

REFERENCES:
patent: 4286279 (1981-08-01), Hutson
patent: 4529998 (1985-07-01), Lade et al.
patent: 4611128 (1986-09-01), Patalong
patent: 4635086 (1987-01-01), Miwa et al.
Ghandhi, Semiconductor Power Devices; Physics of Operation And Fabrication Technology, Wiley, New York, 1977, pp. 220-221.
Wolley et al, "Characteristics of a 200 Gate Turn-Off Thyristor," IEEE Conference Record of IAs 1973 Eight Annual Meeting of the IEEE Industry Applications Society, Oct. 8-Oct. 11, 1973, Milwaukee, Wisconsin, pp. 251-254.

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