Gate-controlled bi-directional semiconductor switching device

Details Gate-controlled bi-directional semiconductor switching device Gate-controlled bi-directional semiconductor switching device

1988-03-29

1991-02-19

Hille, Rolf

357 38, H01L 29747

Patent

active

049948849

ABSTRACT:
In the gate-controlled bi-directional semiconductor switching device, when a negative trigger signal is applied to a second electrode functioning as a gate electrode, a second auxiliary thyristor formed of the sixth, third, first and eighth conductive layers is turned on, causing an ON current to be supplied as a gate current to a main thyristor formed of the fifth, second, first and eighth conductive layers via the first wiring. When a positive trigger signal is applied to the second electrode, a first auxiliary thyristor formed of the seventh, fourth, first and eighth conductive layers is turned on, causing an ON current to be supplied as a gate current to the main thyristor via the second wiring. Since the second electrode is connected to the fourth and sixth conductive layers of the first and second auxiliary thyristors are formed separately from the third and seventh conductive layers, invalid current components in the first and second thyristors are reduced to a minimum. This enhances the gate sensitivity particularly in operation modes I and II.

REFERENCES:
patent: 4286279 (1981-08-01), Hutson
patent: 4529998 (1985-07-01), Lade et al.
patent: 4611128 (1986-09-01), Patalong
patent: 4635086 (1987-01-01), Miwa et al.
Sora K. Ghandhi, Semiconductor Power Devices, pp. 220-221.

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