Gate control circuit for MOS transistor

Details Gate control circuit for MOS transistor Gate control circuit for MOS transistor

1990-07-16

1993-04-20

Sikes, William L.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307253, 328113, H03K 17687

Patent

active

052045617

ABSTRACT:
A gate control circuit is provided for a power MOS transistor (T) having an input capacitance (C.sub.e). The transistor gate is in series with an inductance (L). The inductance is initially precharged. First switch, element (T2, T3) transfers the energy stored in the inductance towards the input capacitance during a switching on condition of the power MOS transistor. Second switch element (T1, T4) transfers back the energy stored in the input capacitance back to the inductance during a switching off condition.

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Kazimierczuk, "High-Speed Driver for Switching Power MOSFET's", I.E.E.E. Transactions on Circuits and Systems 35 (1988) Feb., No. 2, New York, pp. 254-256.

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