Gate circuit, semiconductor integrated circuit device and method

Details Gate circuit, semiconductor integrated circuit device and method Gate circuit, semiconductor integrated circuit device and method

1992-06-09

1994-12-06

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 26, 437 27, 437 32, 437 31, 437 34, 437 59, 437 76, H01L 2120

Patent

active

053710231

ABSTRACT:
A novel gate circuit is disclosed. A first semiconductor switch includes a couple of main terminals connected between a first potential level and an output node, in which a high impedance state is held in response to an input signal having a first logic level and a second logic level, and the impedance state changes from high to low only during a transient period when the input signal changes substantially from the first to second logic level. A second semiconductor switch includes a couple of main terminals inserted between a second potential level different from the first potential level and the output node, in which a high impedance state is held in response to the input signal, and the impedance state changes from high to low only during a transient period when the input signal changes from the second to first logic level.

REFERENCES:
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patent: 5006476 (1991-04-01), DeJong et al.
patent: 5066602 (1991-11-01), Takemoto et al.
patent: 5091322 (1992-02-01), Maeda et al.
Wolf et al., "Silicon Processing for the VLSI ERA vol. 1: Process Technology", Lattice Press, 1986, pp. 292-293.
Wolf et al., "Silicon Processing for the VLSI ERA vol. 1: Process Technology", Lattcie Press, 1986, p. 321-323.

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