Gate circuit of combined field-effect and bipolar transistors wi

Details Gate circuit of combined field-effect and bipolar transistors wi Gate circuit of combined field-effect and bipolar transistors wi

1992-12-08

1993-08-24

Hudspeth, David R.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

H03K 1901

Patent

active

052392120

ABSTRACT:
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

REFERENCES:
patent: 4219373 (1988-01-01), Masuda et al.
patent: 4301383 (1981-11-01), Taylor
patent: 4366522 (1982-12-01), Baker
patent: 4694202 (1987-09-01), Iwamura et al.
patent: 4890017 (1989-12-01), Masuda et al.
patent: 5001366 (1991-03-01), Masuda et al.
IEEE Transactions on Electron Devices, vol. ED-16, No. 11, Nov. 1969, pp. 945-951, H. Lin et al.: "Complementary MOS-Bipolar Transistor Structure".

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