Gate circuit of combined field-effect and bipolar transistors

Details Gate circuit of combined field-effect and bipolar transistors Gate circuit of combined field-effect and bipolar transistors

1987-12-01

1991-03-19

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, 3073031, 357 43, H03K 1901

Patent

active

050013661

ABSTRACT:
A high-speed operation, low-space consumption gate circuit structure-comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

REFERENCES:
patent: 3370995 (1968-02-01), Lowery et al.
patent: 4233615 (1980-11-01), Takemoto et al.
patent: 4301383 (1981-11-01), Taylor
patent: 4512815 (1985-04-01), Khadder et al.
Lin et al., "Complementary MOS-Bipolar Transistor Structure", IEEE T.E.L.D., vol. ED-16, No. 11, Nov. 1969, pp. 945-951.
Yang, Fundamentals of Semiconductor Devices, pub. by McGraw-Hill Book Co., New York, 1978, pp. 266-268.
Terman, "Combining Bipolar and FET Devices on a Single Silicon Substrate", IBM T.D.B., vol. 11, No. 10, Mar. 1969, pp. 1270-1271.

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