Gate circuit of combined field-effect and bipolar transistors

Details Gate circuit of combined field-effect and bipolar transistors Gate circuit of combined field-effect and bipolar transistors

1987-04-30

1988-01-12

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307300, 307446, H03K 1760, H03K 333, H03K 1901

Patent

active

047193735

ABSTRACT:
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

REFERENCES:
patent: Re27804 (1973-10-01), Treadway
patent: 3541353 (1970-11-01), Seelbach et al.
patent: 3786485 (1978-01-01), Wojcik
patent: 3831102 (1974-08-01), Medal
patent: 3867644 (1975-02-01), Cline
patent: 4132906 (1979-01-01), Allen
patent: 4317081 (1982-02-01), Kobayashi
patent: 4616146 (1986-10-01), Lee et al.
"Characteristics and Operation of MOS Field Effect Devices", by Paul Richman, McGraw Hill, New York, TK 7871.95, 1967, pp. 116-118.

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