Gate circuit of combined field-effect and bipolar transistors

Details Gate circuit of combined field-effect and bipolar transistors Gate circuit of combined field-effect and bipolar transistors

1987-12-01

1989-05-09

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307454, 307570, H03K 1704, H03K 1901

Patent

active

048292010

ABSTRACT:
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

REFERENCES:
Lin et al., "Complementary MOS-Bipolar Transistor Structure", IEEE TFLD, vol. ED-16, No. 11, Nov. 1969.

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