Gate circuit

Details Gate circuit Gate circuit

1976-08-09

1978-08-29

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307303, 307313, 307317A, 357 15, 357 36, 357 92, H03K 1908, H03K 1920

Patent

active

041106342

ABSTRACT:
A gate circuit is constituted by a plurality of logical elements formed on the same P type semiconductor substrate. Each logical element is composed of an N type first region and P type second region formed by double diffusion in one of a plurality of P type isolated islands formed on a P type semiconductor substrate, and an N type isolating region and N type buried region surrounding the islands. The P type second region, N type first region and P type island constitute a first vertical PNP transistor by operating as an emitter, base and collector, respectively, while the N type first region, P type island and N type buried region constitute a second vertical NPN transistor by operating as an emitter, base and collector, respectively. In the plurality of logical elements, a Schottky diode is provided for each input section thereof. Connected to a connection point between an anode of this Schottky diode and a base of the second vertical NPN transistor of one logical element is a collector of that of another logical element. A collector of the second NPN transistor of one logical element constitutes an output section.

REFERENCES:
patent: 3922565 (1975-11-01), Berger et al.
patent: 3961351 (1976-06-01), Blatt
patent: 3986045 (1976-10-01), Lutz
patent: 3987310 (1976-10-01), Peltier et al.

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