Gate-charge retaining switch

Details Gate-charge retaining switch Gate-charge retaining switch

2011-08-23

2011-08-23

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S108000, C363S127000

Reexamination Certificate

active

08004344

ABSTRACT:
This invention provides a means and method for preventing unwanted semiconductor turn-on and turn-off, caused by a high rate of voltage change, without significantly affecting the desired ON and OFF transitions of the semiconductor. According to this invention, time is provided during either or both bistable ON and OFF semiconductor states, during which the semiconductor gate is allowed to float, neither being driven ON or OFF, and circuitry for lowering gate-node impedance at non-transitional times to prevent state disruptions by dV/dT is provided.

REFERENCES:
patent: 4461966 (1984-07-01), Hebenstreit
patent: 4484084 (1984-11-01), Cheffer
patent: 4511815 (1985-04-01), Wood
patent: 5635867 (1997-06-01), Timm
patent: 6377477 (2002-04-01), Xie et al.
patent: 6839246 (2005-01-01), Zhang et al.
patent: 7035120 (2006-04-01), Tobita
patent: 7764518 (2010-07-01), Jitaru

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