Gate charge recovery circuit for gate-driven semiconductor devic

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307520, 307543, 307573, 328167, H03K 1756

Patent

active

052987973

ABSTRACT:
A gate charge recovery circuit prevents generation of the voltage spike that would otherwise appear across the sense resistor that is employed to detect the current flowing through the switched terminal of a gate-driven semiconductor device when the device is turned on. The gate charge recovery circuit comprises the combination of a capacitor connected between the reference terminal of the semiconductor device and the positive terminal of a driver and a filter resistor connected between the positive terminal of the driver and the positive terminal of a voltage source.

REFERENCES:
patent: 4215280 (1980-07-01), Mahig
patent: 5021747 (1991-06-01), Isham et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Gate charge recovery circuit for gate-driven semiconductor devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gate charge recovery circuit for gate-driven semiconductor devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gate charge recovery circuit for gate-driven semiconductor devic will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-794456

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.