Gate charge neutralization for insulated gate field-effect trans

Details Gate charge neutralization for insulated gate field-effect trans Gate charge neutralization for insulated gate field-effect trans

1977-11-25

1978-09-26

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 91, H01L 754, H01L 21265

Patent

active

041167210

ABSTRACT:
Positive charges that appear in the gate silicon oxide insulation of a silicon insulated gate field-effect transistor device may be controlled through neutralization by injecting electrons in to the gate oxide from the substrate after the device is complete and metallized by irradiating the back of the substrate with light in the presence of a voltage bias.

REFERENCES:
patent: 3386163 (1966-06-01), Brennemann et al.
patent: 3461547 (1969-08-01), Di Curio
patent: 3513035 (1970-05-01), Fitzgerald et al.
patent: 3570112 (1971-03-01), Barry
patent: 3580745 (1971-05-01), Kooi
patent: 3867196 (1975-02-01), Richman
patent: 3894890 (1975-07-01), Bauerlein
patent: 3929529 (1975-12-01), Poponiak
patent: 3935033 (1976-01-01), Bauerlein et al.
patent: 4061506 (1977-12-01), McElroy
Young et al., "The Electron Trapping . . . . Implanted Al", J. Electronic Mat., 6 (1977), 569.

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