Gate bias circuit of a power amplifier FET

Amplifiers – With semiconductor amplifying device – Including field effect transistor

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330296, H03F 316

Patent

active

060437111

ABSTRACT:
A gate bias circuit of a power amplifier FET, for maintaining a constant operating point, by changing a gate bias voltage, corresponding to a fluctuation of threshold voltage in the respective products of FET, has a construction at least one gate bias FET having a threshold voltage the same with a threshold voltage of the power amplifier FET and having a gate width narrower than a gate width of the power amplifier FET, the bias FET being connected to the gate power amplifier FET which is adapted to receive an input signal, for obtaining a constant current.

REFERENCES:
patent: 4004164 (1977-01-01), Cranford, Jr. et al.
patent: 4987382 (1991-01-01), Saitoh
patent: 5412235 (1995-05-01), Nakajima et al.
patent: 5821814 (1998-10-01), Katayama

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