Gate bias circuit

Amplifiers – With semiconductor amplifying device – Including field effect transistor

Reexamination Certificate

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Details

C330S288000

Reexamination Certificate

active

08004362

ABSTRACT:
Multiple unit transistors each having the same gate length are arranged in a gate-lengthwise direction to form a group of unit transistors. At least one unit transistor included in the group of unit transistors is used as a part of a gate bias circuit and acts as unit transistor (102) that is used for the bias circuit, and all of or part of the other unit transistors are connected in parallel and used as amplifier (101).

REFERENCES:
patent: 6587000 (2003-07-01), Oikawa
patent: 6664941 (2003-12-01), Itakura et al.
patent: 6714081 (2004-03-01), Xu
patent: 6831518 (2004-12-01), Blankenship et al.
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patent: 2000-036582 (2000-02-01), None
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patent: 2000-269426 (2000-09-01), None
patent: 2002-368117 (2002-12-01), None
patent: 2004-078172 (2004-03-01), None
patent: 2004-281467 (2004-10-01), None
patent: 2004-327574 (2004-11-01), None
patent: 99/67884 (1999-12-01), None

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