Gate array base cell with novel gate structure

Details Gate array base cell with novel gate structure Gate array base cell with novel gate structure

1994-10-25

1997-07-29

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257204, 257205, 257903, H01L 2710, H01L 2711

Patent

active

056524412

ABSTRACT:
A semiconductor 110 device includes an array of like base cells wherein each base cell includes at least one source 132 and at least one drain 130 region formed in a semiconductor substrate. At least one gate 126 is formed over and insulated from a channel region 118 which separates the source 132 and drain 130 regions. An insulating layer 190 overlies the structure. A plurality of contacts are formed in the insulating layer in a plurality of substantially parallel; evenly spaced grid lines G1-G5. In addition, at least one additional contact 150 formed between two adjacent ones G2 and G3 of the substantially parallel grid lines is formed. A plurality of interconnect lines 142 and 144 are formed over the insulating layer such that each contact is connected to at least one of the interconnect lines. Modifications, variations, circuit configurations and an illustrative fabrication method are also disclosed.

REFERENCES:
patent: 4554729 (1985-11-01), Tanimura et al.
patent: 4561170 (1985-12-01), Doering et al.
patent: 5055716 (1991-10-01), El Gamel
patent: 5095356 (1992-03-01), Ando et al.
patent: 5136356 (1992-08-01), Sakuda et al.
patent: 5187555 (1993-02-01), Kuroda et al.
patent: 5217915 (1993-06-01), Hashimoto et al.
patent: 5275962 (1994-01-01), Hashimoto
patent: 5289021 (1994-02-01), El Gamal

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