Gate after diamond transistor

Details Gate after diamond transistor Gate after diamond transistor

2008-12-05

2011-10-18

Landau, Matthew (Department: 2813)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C438S172000, C438S570000, C257SE21041, C257SE21049, C257SE21096, C257SE21107, C257SE21603

Reexamination Certificate

active

08039301

ABSTRACT:
A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact.

REFERENCES:
patent: 5278430 (1994-01-01), Kakumu
patent: 7067361 (2006-06-01), Allen et al.
patent: 2004/0192043 (2004-09-01), Makita et al.
patent: 2005/0202665 (2005-09-01), Namba et al.
patent: 2006/0043415 (2006-03-01), Okamoto et al.
patent: 2006/0174823 (2006-08-01), Sung

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