Gasification monitor, method for detecting mist, film...

Coating apparatus – Control means responsive to a randomly occurring sensed... – Sampling of associated base

Reexamination Certificate

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C118S692000, C118S726000, C073S024020, C073S024030, C073S024040, C073S028030, C073S031040

Reexamination Certificate

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10892456

ABSTRACT:
A deposition apparatus supplies a reactive gas obtained by vaporizing a liquid material at a vaporizer30into a chamber10via a processing-gas pipe40and forms a thin film on a semiconductor wafer W due to a thermal decomposition of the reactive gas. The deposition apparatus is provided, in the processing-gas pipe40, with a crystal gauge51detecting a pressure Pq under the influence of mist in the reactive gas and a capacitance manometer52detecting a pressure Pg under no influence of the mist. The apparatus further includes a gasification monitor50detecting a quantity of mist in the reactive gas on the basis of a difference ΔP between the pressure Pq and the pressure Pg measured by the crystal gauge51and the capacitance manometer52in order to prevent deposition defects due to the mist in the reactive gas.

REFERENCES:
patent: 5476002 (1995-12-01), Bowers et al.
patent: 6244575 (2001-06-01), Vaartstra et al.
patent: 2001-148347 (2001-05-01), None
Bowers, Rev. Sci. Instrum. 62(6), Jun. 1991, pp. 1624-1629.

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