Gaseous plasma developing and etching process employing low volt

Details Gaseous plasma developing and etching process employing low volt Gaseous plasma developing and etching process employing low volt

1979-07-10

1981-09-29

Kimlin, Edward C.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

156643, 156646, 430299, 430316, 430317, 430318, 430323, 430325, 430330, 430401, 430435, G03C 500, G03C 524

Patent

active

042923840

ABSTRACT:
A device for dry development of photoresists, etching of semiconductor devices, fabrication of photomasks and removal of photoresist materials is described. The device includes a reaction chamber, a means for evacuating the reaction chamber, a supply of and means for introducing one or more reactive gases to the reaction chamber, a controllable relatively low-voltage direct-current power supply to generate a gas plasma in the reaction chamber, planar electrodes to confine the plasma energy to specific target areas in the chamber, means for defining and controlling the temperature of targets to be processed in the chamber and means for modifying and controlling the temperature of the plasma generating gas. The device and the manner of using the same are described.

REFERENCES:
patent: 3236707 (1966-02-01), Lins
patent: 3705055 (1972-12-01), Christensen et al.
patent: 3733258 (1973-05-01), Hanak et al.
patent: 3767490 (1973-10-01), Alberts
patent: 3837856 (1974-09-01), Irving et al.
patent: 3890176 (1975-06-01), Bolon
patent: 3899338 (1975-08-01), Lewis
patent: 4092210 (1978-05-01), Hoepfner
patent: 4093461 (1978-06-01), Loprest et al.
patent: 4241165 (1980-12-01), Hughes
Maissel et al., "Handbook of Thin Film Technology", 1970, 7-42.
Holloway et al., "Detection by Auger Electron Spectroscopy and Removal by Ozonization of Photoresist Residues".

Affiliated with

Also associated with

Rating

Gaseous plasma developing and etching process employing low volt does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gaseous plasma developing and etching process employing low volt, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gaseous plasma developing and etching process employing low volt will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1234443