Gaseous phase synthesized diamond and method for synthesizing sa

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 39, 427 42, 427249, 423446, C23C 1626, C23C 1648, C23C 1650

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051126435

ABSTRACT:
The present invention relates to gaseous phase synthesized diamond and a method for synthesizing the same. In order to obtain crystalline diamond having remarkably high completeness and hardly containing carbon having a construction other than that of diamond, raw material gases are thermally activated by a thermoelectron-radiating material heated at an extremely high temperature, the thermoelectron-radiating material being connected to a negative pole while a substrate to be coated is connected to a positive pole, by the use of a direct current power source, a plasma being formed between the thermoelectron-radiating material and the substrate and the substrate by applying a direct current voltage, and a diamond film having an average particle size of 2 microns or less, compression residual stress and electric resistance of 10.sup.8 ohm.cm or more being formed on the substrate by using the activation by the thermoelectron-radiating material together with the activation by the formation of DC plasma.

REFERENCES:
patent: 4734339 (1988-03-01), Schachner et al.
patent: 4740263 (1988-04-01), Imai et al.
Sawabe et al, "Growth of Diamond Thin Films by Electron Assisted CVD", Applied Physics Letters, 1985.
Matsumoto et al, "Growth of Diamond Particles from Methane Hydrogen Gas", Nat Inst. for Research in Inorg. Mat., Japan J. of Materials Science 17 (1982) 3106-3112.

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