Gaseous phase chemical treatment reactor

Details Gaseous phase chemical treatment reactor Gaseous phase chemical treatment reactor

1992-09-29

1993-08-03

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118715, 118725, 118728, 118729, C23C 1600

Patent

active

052325083

ABSTRACT:
The invention relates to a gaseous phase chemical treatment reactor for wafers. The aim of the invention is to produce a reactor in which only the face of the wafer to be treated is in fact treated. This aim is achieved with the aid of a reactor comprising at least one treatment chamber (19) located within a main chamber (9) and connected by one of its ends to means (17) for injecting a treatment gas onto a wafer (1) and by its other end to a means (15) for securing said wafer, in that the latter is gripped between a heating susceptor or base (13) and the retaining means (15) in such a way as to seal said treatment chamber (19) and maintain within the latter a pressure below that of the main chamber (9). The invention more particularly relates to reactors for depositing tungsten on silicon wafers.

REFERENCES:
patent: 3854443 (1974-12-01), Baerg
patent: 4870923 (1989-10-01), Sugimoto
patent: 5088444 (1992-02-01), Ohmine
patent: 5091217 (1992-02-01), Hey
patent: 5139459 (1992-08-01), Takahashi

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