Gaseous cleaning method for silicon devices

Details Gaseous cleaning method for silicon devices Gaseous cleaning method for silicon devices

1988-12-23

1989-07-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG17, H01L 2100, H01L 2102, H01L 2130, H01L 21306

Patent

active

048493759

ABSTRACT:
A method for cleaning the surface of a silicon semiconductor device comprising the steps of:
(a) exposing, for a first time, said device for a predetermined time period to an anhydrous cleaning gas mixture containing nitric oxide and hydrogen chloride together with an inert carrier gas; and
(b) exposing, for a second time, said device for a predetermined second time period to a gaseous plasma formed of CF.sub.4, H.sub.2 and N.sub.2 at RF power.

REFERENCES:
patent: 4159917 (1979-07-01), Gluck
Ghandhi, S; VLSI Fabrication Principles, Chapter 9, Wiley & Sons, 1983.
Wolf, S; Silicon Processing for the VLSI Era, Chapters 15 & 16, Lattice Press, 1986.
Sze, S; VLSI Technology, Chapter 8, McGraw-Hill, 1983.

Affiliated with

Also associated with

Rating

Gaseous cleaning method for silicon devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gaseous cleaning method for silicon devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gaseous cleaning method for silicon devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-172109