Gaseous atmosphere control apparatus for a semiconductor manufac

Coating apparatus – With cutting – punching or tearing of work – Web or sheet work

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118500, C23C 1100

Patent

active

040968227

ABSTRACT:
A gaseous atmosphere control apparatus for heat-treating semiconductors in a uniform gaseous atmosphere condition is disclosed. The control apparatus is provided with a reaction pipe through which semiconductor wafers are transferred to be heat-treated. A gas distribution pipe is fixed to the inside wall of the reaction pipe for guiding the transfer of the wafers and supplying heat-treating gas in the reaction pipe. The distribution pipe is provided with a plurality of blow-off holes, the diameter thereof being made wider as the pipe extends longitudinally, to thereby control the gaseous atmosphere condition in the reaction pipe to be uniform.

REFERENCES:
patent: 3461836 (1969-08-01), Henker
patent: 3602192 (1971-08-01), Grochowski et al.
patent: 3678893 (1972-07-01), Bell
patent: 3750620 (1973-08-01), Eversteijn et al.
patent: 3922467 (1975-11-01), Pinchon
patent: 4018183 (1977-04-01), Meuleman
patent: 4018184 (1977-04-01), Nagasawa et al.
patent: 4069009 (1978-01-01), Yamawaki et al.
Eshbach et al., IBM Technical Disclosure Bulletin, vol. 13, No. 6, Nov. 1970.

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