Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1995-08-17
1996-11-26
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
Multizone chamber
118723E, 118723MP, 20429807, C23C 1600
Patent
active
055781292
ABSTRACT:
An etching system for processing a semiconductor wafer has a processing chamber and a load lock chamber. The load lock chamber includes an airtight casing having openings through which the wafer is transferred, and each of the openings is openably and airtightly closed by a gate valve. A transfer arm for carrying the wafer is provided within the casing. A gas supplying system for supplying an inert gas and an exhausting system are connected to the casing. A gas supplying head is connected to the inner end of the gas supplying system, and has an outlet filter which is made of a porous ceramic plate formed into a cylinder. The porous ceramic plate has a multi-layer structure consisting of supporting, intermediate and filtering layers. The average pore diameter of the filtering layer is from 0.8 .mu.m to 0.1 .mu.m, and the porosity thereof is from 10% to 50%.
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Breneman R. Bruce
Chang Joni Y.
Tokyo Electron Limited
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