Gas sensors with improved resistance to humidity interference

Measuring and testing – Gas analysis – Detector detail

Reexamination Certificate

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Reexamination Certificate

active

07010957

ABSTRACT:
Semiconductor gas-sensitive materials of the formula Cr2-xTixO3where 0.05>x≧0.0001, and gas sensors formed therefrom.

REFERENCES:
patent: 6046054 (2000-04-01), McGeehin et al.
patent: 26 03 785 (1977-08-01), None
patent: 2 202 948 (1988-10-01), None
patent: WO 95/00836 (1995-01-01), None
patent: WO 00/24677 (2000-05-01), None
G.S. Henshaw et al, “Selectivity and Composition Dependence of Response of Gas-sensitive Resistors,” J. Mater. Chem., 1995, 5(11), 1791-1800.
Jayaraman, V. et al, “Preparation and characterisation of Cr2-xTixO3+δand its sensor properties,” Sensors and Actuators B55 (1999) pp. 175-179.
Somiya, S. et al, “Phase Relations of the Cr2O3-TiO2System,” Journal of Solid State Chemistry 25 (1978) pp. 273-284.

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