Gas sensors and their manufacturing methods

Details Gas sensors and their manufacturing methods Gas sensors and their manufacturing methods

1995-03-16

1997-04-08

Snay, Jeffrey

Chemical apparatus and process disinfecting, deodorizing, preser

Analyzer, structured indicator, or manipulative laboratory...

Means for analyzing gas sample

422 98, 340634, 73 3106, G01N 2712

Patent

active

056184964

ABSTRACT:
P-type semiconductor 15 and n-type semiconductor 16 are formed as thick films or spray-coated onto electrodes 13 and 14 on top of substrates 11 and 12, with films of p-type semiconductor 15 and n-type semiconductor 16 being formed in such manner that they are in mutual contact. If a gas to be detected is introduced to the contact region while a bias voltage is being applied between the two electrodes, an output will be obtained in accordance with the concentration of flammable gas components in the gas being detected. In addition, if a film is formed from a material comprising a mixture of particles of p-type semiconductor and particles of n-type semiconductor, the bias voltage can be an AC voltage.

REFERENCES:
patent: 4203946 (1980-05-01), Ryerson
patent: 4209477 (1980-06-01), Yanagida et al.
patent: 4259292 (1981-03-01), Ichinose et al.
patent: 4587104 (1986-05-01), Yannopoulos
patent: 4885929 (1989-12-01), Kasahara et al.
patent: 5055270 (1991-10-01), Consadori et al.

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