Gas sensor with improved perovskite type material

Details Gas sensor with improved perovskite type material Gas sensor with improved perovskite type material

1983-07-28

1985-03-26

Envall, Jr., Roy N.

Electrical resistors

Resistance value responsive to a condition

Gas, vapor, or moisture absorbing or collecting

73 23, 422 94, 422 98, G01N 2712

Patent

active

045076430

ABSTRACT:
A gas sensor is described which includes a layer of a sensitive material formed on an electric insulating substrate and spaced electrodes electrically connected to the layer. The layer is formed of a porous film of a uniform mixture which contains a p-type compound oxide semiconductor with a perovskite type of crystal structure as the major ingredient and one or more of vanadium, niobium, tantalum and/or compounds thereof as minor ingredients. The minor ingredients are contained in the layer in an amount of 0.01 to 5% by weight, based on the weight of the p-type compound oxide semiconductor, and are incorporated into the layer by diffusing them into the layer. The gas sensor exhibits a small change with time and a reduced tailing effect attendant on variations in the gas combustion. With this, it is possible to effect measurements, detection and control with a high reliability.

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