Gas sensor having metal-oxide semiconductor layer

Details Gas sensor having metal-oxide semiconductor layer Gas sensor having metal-oxide semiconductor layer

1991-03-13

1993-10-05

Niebling, John F.

Chemistry: electrical and wave energy

Apparatus

Electrolytic

73 3106, 338 34, 422 98, G01N 2712

Patent

active

052501701

ABSTRACT:
A gas sensor includes a substrate, a heater member formed on the base member, a gas sensitive structure formed on the heater member by a process comprising the following steps of forming a stacked layer structure on the heater member, the stacked layer structure including at least a metal-oxide semiconductor layer and an insulating film, and carrying out a heat treatment with respect to the stacked layer structure so that a constituent of the insulating film is diffused in spaces among crystal particles of the metal-oxide semiconductor layer, and electrode layers are in contact with the gas sensitive structure.

REFERENCES:
patent: 4580439 (1986-04-01), Manaka
patent: 5003812 (1991-04-01), Yagawara et al.

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