Gas sensor having a field-effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal

Reexamination Certificate

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Details

C257S003000, C257SE31053, C257SE29255

Reexamination Certificate

active

08072009

ABSTRACT:
A gas sensor having a field-effect transistor for detecting gases or gas mixtures is provided. The gas sensor includes a substrate having a source, drain and gate region, a gas-sensitive layer being applied on the gate region. A porous adhesive agent is provided for the adhesion of the gas-sensitive layer in the gate region.

REFERENCES:
patent: 5698771 (1997-12-01), Shields et al.
patent: 2004/0255669 (2004-12-01), LaBarge et al.
patent: 2007/0132043 (2007-06-01), Bradley et al.
patent: 10 2005 008 051 (2006-08-01), None
patent: 102005033639 (2007-01-01), None

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