Gas sensor and fabrication method thereof

Details Gas sensor and fabrication method thereof Gas sensor and fabrication method thereof

2006-02-14

2006-02-14

Williams, Hezron (Department: 2856)

Measuring and testing

Gas analysis

Detector detail

C073S023200

Reexamination Certificate

active

06997040

ABSTRACT:
A gas sensor includes a silicon substrate provided with a recess, an insulating layer, a first and a second conductive patterned layers and a detecting portion for sensing a gas which passes there through. In the gas sensor, the insulating layer is formed on a top portion of the silicon substrate which does not form the recess. The first and the second conductive patterned layers extend over the recess, thereby being apart from the silicon substrate physically. The detecting portion is formed on both portions of the first and the second conductive patterned layers.

REFERENCES:
patent: 4580439 (1986-04-01), Manaka
patent: 4720394 (1988-01-01), Kojima et al.
patent: 4953387 (1990-09-01), Johnson et al.
patent: 4984446 (1991-01-01), Yagawara et al.
patent: 5401376 (1995-03-01), Foos et al.
patent: 5565084 (1996-10-01), Lee et al.
patent: 5759367 (1998-06-01), Matsuura et al.
patent: 5763782 (1998-06-01), Moore et al.
patent: 5783154 (1998-07-01), Althainz et al.
patent: 5902556 (1999-05-01), Van De Vyver et al.
patent: 0751389 (1997-01-01), None
patent: 63259459 (1988-10-01), None
patent: 1-313751 (1989-12-01), None
patent: 6-347432 (1994-12-01), None
patent: 11166942 (1999-06-01), None
English Language Abstract of JP 1-313751.
English Language Abstract of JP 11-166942.
English Language Abstract of JP 6-347432.

Affiliated with

Also associated with

Rating

Gas sensor and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gas sensor and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas sensor and fabrication method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3664537