Gas sensor

Chemistry: electrical and wave energy – Apparatus – Electrolytic

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Details

204419, 204 1T, 357 25, 29571, G01N 2746

Patent

active

046505610

ABSTRACT:
An ammonia gas sensor comprises a dual gate field effect transistor (FET) in which the two gate electrodes are of platinum deposited respectively by sputtering and evaporation. The gate regions of the two FETs are connected together differentially and the net drain source voltage represents the concentration of ammonia gas to which the sensor is exposed.

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