Gas sensor

Electrical resistors – Resistance value responsive to a condition – Gas – vapor – or moisture absorbing or collecting

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338308, 338309, H01L 700

Patent

active

043994245

ABSTRACT:
A semiconductor gas sensor comprises an insulating substrate (11) on which a resistive heater track (15) coupled to a pair of electrodes (12, 14) is deposited. A film (16) of a semiconductive metal oxide, typically a doped oxide, is ion-plated on to the assembly so as to contact the resistive track (15) and a further electrode (13). Exposure of the device to a particular gas, e.g. hydrogen sulphide, reduces the resistivity of the semiconductive film (16), this change being detected via an amplifier circuit (not shown). In an alternative version of the sensor (FIGS. 5a, 5b and 6) the heater is disposed under a dielectric layer, the semiconductive film being ion-plated onto the dielectric layer and electrodes therein.

REFERENCES:
patent: 3479257 (1969-11-01), Shaver
patent: 3901067 (1975-08-01), Broadman, Jr. et al.
patent: 4343768 (1982-08-01), Kimura

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