Gas sensitive device

Details Gas sensitive device Gas sensitive device

1987-03-12

1990-06-05

Wojciechowicz, Edward J.

73 3106, 350 9629, 357 231, H01L 2966, H01L 2996

Patent

active

049318519

ABSTRACT:
A gas sensitive device, for example a gas sensitive MISFET (FIGS. 1 to 3) has a gas-sensitive electrode (15) comprising a catalytically active metal (e.g. Pt or Pd) and a non-metallic material (e.g. SiO.sub.2) mixed with, or deposited at an exposed surface of, the metal to modify the catalytic activity of the metal. The electrode has an enhanced sensitivity to, and selectivity of, certain gases. The composite material is applicable to other gas-sensitive devices, e.g. an optical fibre gas sensor.

REFERENCES:
patent: 4127462 (1978-11-01), Blurton et al.
patent: 4242302 (1980-12-01), Kitamura et al.
patent: 4290586 (1981-09-01), Kane et al.
patent: 4313338 (1982-02-01), Abe et al.
patent: 4316140 (1982-02-01), Senturia
patent: 4347732 (1982-09-01), Leary
patent: 4601914 (1986-07-01), Barnes et al.
Bergveld, P. "The Impact of MOSFET-Based Sensors", Sensors and Actuators, 8 (1985) 109-127.
"A Hydrogen Sensitive MOS Field Effect Transistor", by I. Lundstrom, vol. 26, Applied Physics Letters 55-57 (1975).
Performance of Carbon Monoxide-Sensitive MOSFET's with Metal-Oxide Semiconductor Gates, Dobos et al., IEEE Trans. on Electron Devices, ED-32, No. 7, pp. 1165-1169, Jul. 1985.
Ion-Sensitive Field-Effect Transistors with Inorganic Gate Oxide for pH Sensing, Akiyama et al., IEEE Trans. on Electron Devices, vol. II, ED-29, No. 12, pp. 1936-1941, Dec. 1982.

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