Gas-sensing semiconductor devices

Details Gas-sensing semiconductor devices Gas-sensing semiconductor devices

2006-07-12

2010-12-14

Williams, Hezron (Department: 2856)

Measuring and testing

Gas analysis

Detector detail

Reexamination Certificate

active

07849727

ABSTRACT:
A gas-sensing semiconductor device1′ is fabricated on a silicon substrate2′ having a thin silicon dioxide insulating layer3′ in which a resistive heater6made of doped single crystal silicon formed simultaneously with source and drain regions of CMOS circuitry is embedded. The device1′ includes a sensing area provided with a gas-sensitive layer9′ separated from the heater6′ by an insulating layer4′. As one of the final fabrication steps, the substrate2′ is back-etched so as to form a thin membrane in the sensing area. The heater6′ has a generally circular-shaped structure surrounding a heat spreading plate16′, and consists of two sets20′, 21′of meandering resistors having arcuate portions nested within one another and interconnected in labyrinthine form. The fabrication of the heater at the same time as the source and drain regions of CMOS circuitry is particularly advantageous in that the gas-sensing semiconductor device is produced without requiring any fabrication steps in addition to those already employed in the IC processing apart from a post-CMOS back etch and deposition of the gas-sensitive layer. The circular design is advantageous in that it is the best solution to minimise the size of the membrane at fixed power loss and heated area.

REFERENCES:
patent: 5892252 (1999-04-01), Hammond et al.
patent: 2004/0075140 (2004-04-01), Baltes et al.
patent: 1 324 395 (2003-07-01), None
International Search Report for corresponding Application No. PCT/GB2006/050199 mailed Dec. 27, 2006.
British Search Report for corresponding Application No. GB0517869.4 dated Dec. 30, 2005.
Gardner et al.; Numerical simulation of a new generation of high temperature micropower gas and odour sensors based on SOI technology; Proceedings of the SPIE; The International Society for Optical Engineering; 1999; vol. 3673; pp. 104-112; ISSN 0277 786 X.
Iwaki T. et al.; “Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors”; Journal of Physics: Conference Series, Institute of Physics Publishing; Bristol, GB; vol. 15; No. 1; Jan. 2005; pp. 27-32; XP020093800.

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