Gas sensing diode and method of manufacturing

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Chemically responsive

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438 92, 438572, H01L 21238

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active

060279540

ABSTRACT:
A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800.degree. C. The diode is both sensitive and stable at elevated temperatures.

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Karlstein, et al. "Electrical Properties of MIS Structures on 6N-Sic". Linkoping University, Conference pp. X-17 to X-22. (Jun. 5-10, 1994).

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