Gas pressure sintering of silicon nitride with addition of rare

Details Gas pressure sintering of silicon nitride with addition of rare Gas pressure sintering of silicon nitride with addition of rare

1987-11-06

1989-03-07

Dixon, Jr., William R.

Compositions: ceramic

Ceramic compositions

Refractory

501 98, 501152, 264 65, C04B 3558

Patent

active

048106780

ABSTRACT:
A silicon nitride base sintered body having high strength at normal and high temperatures is obtained by a nitrogen gas atmosphere pressure sintering method using a combination of Y.sub.2 O.sub.3 and Nd.sub.2 O.sub.3 and/or Sm.sub.2 O.sub.3 as a sintering aid. The molar ratio of Y.sub.2 O.sub.3 to Nd.sub.2 O.sub.3 and/or Sm.sub.2 O.sub.3 is from 9:1 to 1:9. The pressure of the nitrogen gas atmosphere is not lower than 1 atm and is lower than 500 atm. The sintering temperature is 1750.degree.-2200.degree. C.

REFERENCES:
patent: 4113830 (1978-09-01), Mazdiyasni et al.
patent: 4332909 (1982-06-01), Nishida et al.
patent: 4609633 (1986-09-01), Fukuhara et al.
Sanders et al, Strength and Microstructure of Sintered Si.sub.3 N.sub.y with Rare-Earth-Oxide Additions, Cer. Bull. vol. 64 No. 2 1985.

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