Gas pressure regulation in vapor deposition

Coating apparatus – Gas or vapor deposition

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Details

118719, C23C 1600

Patent

active

060173955

ABSTRACT:
A vapor deposition apparatus includes a plurality of gas sources, a first gas feed line which is in fluid communication with the gas sources and through which a gas necessary for conducting vapor deposition is introduced into a reaction pipe, a second gas feed line which is in fluid communication with the gas sources and through which a gas unnecessary for conducting vapor deposition is exhausted, a detector for detecting a difference A in pressure between the first and second gas feed lines, the detector being disposed upstream of inlet ports at which gases are supplied to the first and second gas feed lines from the gas sources, a calculator for calculating and storing a difference B in pressure between the first and second gas feed lines to be measured at a location at which the detector is disposed, which difference B in pressure would cause the difference A in pressure measured at the inlet ports to be reduced to within an allowable range, and a pressure regulator disposed on one of the first and second gas feed lines for regulating a pressure in one of the first and second gas feed lines in accordance with the difference B in pressure. The vapor deposition apparatus makes it possible to eliminate the pressure difference between the first and second gas feed lines at the inlet ports, thereby preventing suction and discharge of source gases which would occur between the first and second gas feed lines, which are different in pressure, when supply of source gases is switched between the first and second gas feed lines.

REFERENCES:
patent: 4167915 (1979-09-01), Toole et al.
patent: 4747367 (1988-05-01), Posa
patent: 5470389 (1995-11-01), Ishihara et al.
patent: 5575854 (1996-11-01), Jinnouchi et al.
patent: 5580822 (1996-12-01), Hayakawa et al.
patent: 5595603 (1997-01-01), Klinedinst et al.
patent: 5673750 (1997-10-01), Tsubone et al.

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