Gas plasma reactor for circuit boards and the like

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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Details

156345, 156643, 204192E, 250531, C23F 100

Patent

active

042858003

ABSTRACT:
Gas plasma reactor for treatment of printed circuit boards and other relatively large, generally planar objects. The reactor includes a rack assembly having a plurality of spaced apart bars for holding the objects and a pair of generally planar electrodes positioned outside the rack assembly. The rack assembly is maintained at ground potential, and the electrodes are energized with RF energy to form an ionizing field between the electrodes and the rack bars.

REFERENCES:
patent: 3414503 (1968-12-01), Brichard
patent: 4012307 (1977-03-01), Phillips
John L. Voseen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 509-510.
H. A. Clark and E. D. Purcell, Wafer Holder, IBM Technical Disclosure Bulletin, vol. 19, No. 10, Mar. 1977, p. 3734.

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