Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1979-04-18
1981-08-25
Gantz, Delbert E.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
156345, 156643, 204192E, 250531, C23F 100
Patent
active
042858003
ABSTRACT:
Gas plasma reactor for treatment of printed circuit boards and other relatively large, generally planar objects. The reactor includes a rack assembly having a plurality of spaced apart bars for holding the objects and a pair of generally planar electrodes positioned outside the rack assembly. The rack assembly is maintained at ground potential, and the electrodes are energized with RF energy to form an ionizing field between the electrodes and the rack bars.
REFERENCES:
patent: 3414503 (1968-12-01), Brichard
patent: 4012307 (1977-03-01), Phillips
John L. Voseen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 509-510.
H. A. Clark and E. D. Purcell, Wafer Holder, IBM Technical Disclosure Bulletin, vol. 19, No. 10, Mar. 1977, p. 3734.
Branson International Plasma Corp.
Gantz Delbert E.
Leader William
LandOfFree
Gas plasma reactor for circuit boards and the like does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gas plasma reactor for circuit boards and the like, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas plasma reactor for circuit boards and the like will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1157023