Gas plasma reactor and process

Details Gas plasma reactor and process Gas plasma reactor and process

1977-03-04

1979-04-10

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, 156665, 204298, 250531, C23C 1500, C23F 100

Patent

active

041487052

ABSTRACT:
Process and apparatus for carrying out a reaction, such as etching aluminum, in the glow discharge of a gas plasma. The plasma is formed between a pair of closely spaced electrodes, and a distributed impedance is provided in series with the plasma to assure uniform distribution of the ionizing current and the glow discharge of the plasma throughout the region between the electrodes.

REFERENCES:
patent: 3816198 (1974-06-01), LaCombe
patent: 3984301 (1976-10-01), Matsuzaki et al.
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4026742 (1977-05-01), Fujino
H. A. Clark, "Plasma Etching Process", IBM Tech. Disc. Bull., vol. 17, p. 1955 (1974).
G. E. Alcorn, "Plasma Etching Via Holes In Sputtered Quartz", IBM Tech. Disc. Bull., vol. 17, pp. 2701-2702 (1975).
L. Maissel et al., Editors, "Handbook of Thin Film Technology", McGraw-Hill, N.Y., (1970), pp. 4-6, 4-13, 7.50, 7-51.

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