Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-03-06
1980-09-02
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
118719, 148 15, 148174, 156610, 156613, 156614, 252 623GA, 357 61, 427 87, H01L 21205, H01L 21365
Patent
active
042204887
ABSTRACT:
A process and an apparatus for epitaxy in a gaseous phase, producing thin and homogeneous layers of monocrystalline indium phosphide. The process comprises two steps. In the first step, the phosphine is decomposed in a pyrolysis chamber which extends through a kiln in accordance with the reaction: ##EQU1## Thereafter, in a second step, the phosphorus is reacted with triethylindium in an atmosphere of hydrogen and nitrogen: ##EQU2## The residual gases are drawn off by a vacuum pump.
REFERENCES:
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3421952 (1969-01-01), Conrad et al.
patent: 3617371 (1971-11-01), Burmeister
patent: 3867202 (1975-02-01), Ichiki et al.
Tietjen et al., "Preparation. . . Epitaxial I.sub.m Ac.sub.1-x P.sub.x using. . . phosphine" J. Electrochem. Soc., vol. 116, No. 4, Apr. 1969, pp. 492-494.
Allen, H. A., "Orientation Dependence of Epitaxial I.sub.m Aa.sub.x P.sub.1-x on GaAs".
Ibid., vol. 117, No. 11, Nov. 1970, pp. 1417-1419.
Tietjen et al., "Vapor-Phase Growth of Several III-V. . . Semiconductors" Solid State Technology, Oct. 1972, pp. 42-49.
Seki et al., "New Vapor Growth Method for Gap. . . " Japanese J. Appl. Phys., vol. 12 (1973), No. 7, pp. 1112-1113.
Beuchet Gerard
Bonnet Michel
Duchemin Jean-Pascal
Koelsch Francois
Leguen Daniel
"Thomson-CSF"
Rutledge L. Dewayne
Saba W. G.
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