Gas-phase doping method using germanium-containing additive

Details Gas-phase doping method using germanium-containing additive Gas-phase doping method using germanium-containing additive

1994-08-09

1996-02-06

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437950, 148DIG58, H01L 21223

Patent

active

054895502

ABSTRACT:
A germanium-containing compound may be used as an additive to dopant source gas to improve the direct GPD (Gas-Phase Doping) processes. This invention involves a gas-phase doping method for semiconductor wafers, including the steps of providing a semiconductor wafer, and exposing the surface of the wafer to a process medium comprising a dopant gas in order to dope the surface of the wafer, wherein the process medium also comprises a germanium-containing compound gas. Preferably, the process medium also comprises a carrier gas, where the carrier gas is hydrogen. The germanium-containing gas can be germane, digermane, or other suitable germanium-containing compound. The wafer and dopant gas may also be exposed to a plasma source, and the wafer may be heated in a rapid thermal processing reactor. Some advantages over conventional GPD processes include faster desorption of byproducts and incorporation of dopant atoms, shallower junctions, shorter cycle times, and lower processing temperatures.

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